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Home List of Titles Effects of pulsed anodic oxide on the intermixing in InGaAs/GaAs and InGaAs/AlGaAs quantum wells
Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.3/1045
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- Effects of pulsed anodic oxide on the intermixing in InGaAs/GaAs and InGaAs/AlGaAs quantum wells
- Yuan, Shu; Liu, Cheang Y.; Zhao, Fong; Chan, Ming C. Y.; Tsui, Wong K.; Dao, Lap Van; Liu, Xiao Q.
- Intermixing in InGaAs/GaAs and InGaAs/AlGaAs quantum well structures after rapid thermal annealing with and without an anodic oxide cap on the surface was studied by low temperature (8 K) photoluminescence (PL). The PL peak energy was shifted towards higher photon energies (blueshift) in both types of samples, especially at annealing temperatures above 880 °C. The anodic oxide cap has been demonstrated to inhibit the band-gap blueshift of the quantum well structures. Secondary ion mass spectroscopy data indicated that Ga vacancies were injected from the anodic oxide cap into the epitaxial layers. These vacancies enhanced interdiffusion between group III atoms, and partially relaxed the strain in the structure, resulting in the effect of the suppression of the blueshift.
- Publication type
- Journal article
- Research centre
- Swinburne University of Technology. School of Biophysical Science and Electrical Engineering
- Journal of applied physics, Vol. 93, no. 12 (June 2003), pp. 9823-9829
- Publication year
- Indium compounds; Gallium arsenide; III-V semiconductors; Photoluminescence; Chemical interdiffusion; Spectral line shift; Rapid thermal annealing; Anodised layers; Secondary ion mass spectra; Vacancies (crystal); Semiconductor quantum wells
- American Institute of Physics
- pp. 9823-9829
- Publisher URL
- Copyright © 2003 American Institute of Physics. Reproduced in accordance with the copyright policy of the publisher.
- Full text
- Peer reviewed