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Title

Structural, electrical, and optical analysis of ion implanted semi-insulated InP

Author(s)

Carmody, Christine;  Tan, Hark H.;  Jagadish, Chennupati;  Douheret, Olsoon;  Maknys, Kerek;  Anand, S.;  Zou, Joy;  Dao, Lap Van;  Gal, Michael

Abstract

Semi-insulating InP was implanted with MeV P, As, Ga, and In ions, and the resulting evolution of structural properties with increased annealing temperature was analyzed using double crystal x-ray diffractometry and cross sectional transmission electron microscopy. The types of damage identified are correlated with scanning spreading resistance and scanning capacitance measurements, as well as with previously measured Hall effect and time resolved photoluminescence results. We have identified multiple layers of conductivity in the samples which occur due to the nonuniform damage profile of a single implant. Our structural studies have shown that the amount and type of damage caused by implantation does not scale with implant ion atomic mass.

Publication type

Journal article

Source

Journal of applied physics, Vol. 95, no. 2 (Jan. 2004), pp. 477-482

Publication year

2004

Keyword(s)

Indium compounds;  III-V semiconductors;  Ion implantation;  Indium;  Phosphorus;  Arsenic;  Gallium;  Semiconductor doping;  Electrical conductivity;  Crystal structure;  X-ray diffraction;  Transmission electron microscopy;  Hall effect;  Photoluminescence;  Carrier density

Publisher

American Institute of Physics

Format

pp. 477-482

ISSN

0021-8979

Publisher URL

Journal of applied physics

Publisher URL

http://dx.doi.org/doi:10.1063/1.1633349

Copyright

Copyright © 2004 American Institute of Physics. Reproduced in accordance with the copyright policy of the publisher.

Full text

Peer reviewed