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Title

Ultrafast carrier trapping in high energy ion implanted indium phosphide

Author(s)

Carmody, C.;  Boudinov, H.;  Tan, H. H.;  Jagadish, C.;  Dao, L. V.;  Gal, M.

Abstract

We report on the results of ion implanted and annealed InP for ultrafast optoelectronic applications. MeV ions (P+, As+, In2+, and Ga+) were implanted into semi-insulating InP at 200°C to a dose of 1 × 1016 cm-2. The samples were the annealed at 400, 500, 600 and 700°C for 30 seconds and Hall effect, time resolved photoluminescence, and double crystal X-ray diffractometry (DCXRD) measurements were performed on them. Generally, carrier trapping times decreased for lower annealing temperatures and larger ion mass, however the gallium implanted samples exhibited the shortest trapping times (less than 1 ps) even though the mass of gallium is similar to that of arsenic. At annealing temperatures of 600 and 700°C, it is presumed that the creation of shallow donor levels has caused the maximum sheet resistivities to drop to ∼300 ohm/square from the as implanted values of ∼ 2 × 105 ohm/square. DCXRD spectra were similar for the P+ and As+ implanted samples, while the Ga+ and In2+ implanted samples exhibited different types of structural evolution as a function of annealing temperature. While these materials have resistivities that are too low for use in ultrafast photodetectors, they are ideal as saturable absorbers for the mode locking of solid state lasers.

Publication type

Conference paper

Source

Proceedings of the 12th IEEE International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002), Smolenice Castle, Slovakia, 30 June-05 July 2002, pp. 221-224

Publication year

2002

Keyword(s)

Annealing;  Arsenic;  Double crystal X-ray diffractometry;  Electron traps;  Gallium;  Hall effect;  Indium;  Ion implantation;  Laser mode locking;  Phosphorus;  Photoluminescence;  Positive ions;  Semiconducting indium phosphide;  Time-resolved photoluminescence;  Ultrafast carrier trapping;  X ray diffraction analysis

Publisher

IEEE

ISBN

0780374185

Publisher URL

http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1242760

Copyright

Copyright © 2002 IEEE. Published version of the paper reproduced here in accordance with the copyright policy of the publisher. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Full text

Peer reviewed