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Title

Study of intermixing in a GaAs/AlGaAs quantum-well structure using doped spin-on silica layers

Author(s)

Fu, Lan;  Van Der Heijden, Robert W.;  Tan, Hark Hoe;  Jagadish, Chennupati;  Dao, Lap Van;  Gal, Michael

Abstract

The effect of two different dopants, P and Ga, in spin-on glass (SOG) films on impurity-free vacancy disordering (IFVD) in GaAs/AlGaAs quantum-well structures has been investigated. It is observed that by varying the annealing and baking temperatures, P-doped SOG films created a similar amount of intermixing as the undoped SOG films. This is different from the results of other studies of P-doped SiO2 and is ascribed to the low doping concentration of P, indicating that the doping concentration of P in the SiO2 layer is one of the key parameters that may control intermixing. On the other hand, for all the samples encapsulated with Ga-doped SOG layers, significant suppression of the intermixing was observed, making them very promising candidates with which to achieve the selective-area defect engineering that is required for any successful application of IFVD.

Publication type

Journal article

Research centre

Swinburne University of Technology. School of Biophysical Science and Electrical Engineering

Source

Applied physics letters, Vol. 80, no. 7 (Feb. 2002), pp. 1171-1173

Publication year

2002

Keyword(s)

Gallium arsenide;  Aluminium compounds;  Glass;  III-V semiconductors;  Semiconductor quantum wells;  Vacancies (crystal);  Annealing;  Defect states

Publisher

American Institute of Physics

Format

pp. 1171-1173

ISSN

0003-6951

Publisher URL

Applied physics letters

Publisher URL

http://dx.doi.org/doi:10.1063/1.1449522

Copyright

Copyright © 2002 American Institute of Physics. Reproduced in accordance with the copyright policy of the publisher.

Full text

Peer reviewed