Home List of Titles Synthesis of microcrystalline silicon films using high-density microwave plasma source from dichlorosilane
Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.3/149939
- Synthesis of microcrystalline silicon films using high-density microwave plasma source from dichlorosilane
- Saha, Jhantu Kumar; Ohse, Naoyuki; Hamada, Kazu; Haruta, Koji; Kobayashi, Tomohiro; Ishikawa, Tatsuo; Takemura, Yu-ichiro; Shirai, Hajime
- The growth of microcrystalline (μc-) Si:H:Cl films was studied using a high-density and low-temperature microwave plasma source and a spoke antenna of a SiH2Cl2-H2 mixture. Spectroscopic ellipsometry and cross-sectional transmission electron microscopy revealed that the uc-Si:H:Cl films with a small volume fraction of void were synthesized from SiH2Cl2 rather than μc-Si:H from SiH4 at a high deposition rate of 20 Å/s. These originated from the chemical reactivity of SiHxCly in high-density microwave plasma. The excessive crystallization was suppressed with a small volume fraction of void in SiH2Cl2 plasma compared with that synthesized from Si2H4. The fine structure of μc-Si:H:Cl was studied and compared with that of previously studied μc-Si:H synthesized from SiH4 [Jpn. J. Appl. Phys. 38 (1999) 6629].
- Publication type
- Journal article
- Japanese Journal of Applied Physics, Part 2: Letters, Vol. 46, no. 25-28 (Jul 2007), pp. L696-L698
- Publication year
- FOR Code(s)
- 01 Mathematical Sciences; 02 Physical Sciences
- μ; C-Si:H:Cl; High-density plasma; Microwave plasma; SiH2Cl2; Ellipsometry; Film growth; Plasmas; Synthesis (chemical); Thin films; Transmission electron microscopy; Microcrystalline silicon
- Japan Society of Applied Physics
- Publisher URL
- Copyright © 2007 The Japan Society of Applied Physics.
- Peer reviewed