Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.3/149921

Title

Rapid crystallization of amorphous silicon utilizing a very-high-frequency microplasma jet for Si thin-film solar cells

Author(s)

Saha, Jhantu Kumar;  Haruta, Koji;  Yeo, Mina;  Kobayashi, Tomohiro;  Shirai, Hajime

Abstract

The rapid crystallization of amorphous silicon utilizing a very-high-frequency thermal microplasma jet of argon is demonstrated. Highly crystallized microcrystalline Si films were fabricated on textured a-Si:H:B/SnO2/glass by adjusting the translational velocity of the substrate stage. The crystallization of amorphous silicon was promoted from the bottom surface with no significant inter diffusions of B and Sn from Si:H:B/SnO2 layers to intrinsic crystallized Si layer. The preliminary result of p-i-n Si thin-film solar cell is demonstrated using the microcrystalline Si films fabricated by the plasma annealing.

Publication type

Journal article

Source

Solar Energy Materials and Solar Cells: incorporating proceedings of the 17th International Photovoltaic Science and Engineering Conference, Fukuoka, Japan, 03-07 December 2007 / M. Kondo, H. Okamoto and M. Yamaguchi (eds.), Vol. 93, no. 6-7 (Jun 2009), pp. 1154-1157

Publication year

2009

FOR Code(s)

0912 Materials Engineering;  0914 Resources Engineering and Extractive Metallurgy

Keyword(s)

Amorphous silicon;  Annealing;  Argon;  a-Si:H;  B2H6;  BH;  Bottom surfaces;  Crystallisation;  High frequencies;  Inter diffusions;  Microcrystalline silicon;  Micro-plasma jets;  Nonmetals;  PH3;  Photovoltaic cells;  Plasma annealing;  Plasma devices;  Plasma display devices;  Plasmas;  Rapid crystallisations;  Silicon layers;  Silicon thin-film solar cell;  Solar cells;  Translational velocities;  Thin film devices;  Tin

Publisher

Elsevier

ISSN

0927-0248

Publisher URL

http://dx.doi.org/10.1016/j.solmat.2009.03.001

Copyright

Copyright © 2009.

Peer reviewed