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Home List of Titles Spectroscopic ellipsometry studies on hydrogenated amorphous silicon thin-films deposited using DC saddle field plasma enhanced chemical vapor deposition system
Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.3/149933
- Spectroscopic ellipsometry studies on hydrogenated amorphous silicon thin-films deposited using DC saddle field plasma enhanced chemical vapor deposition system
- Saha, Jhantu Kumar; Bahardoust, Barzin; Leong, Keith; Gougam, Adel B.; Kherani, Nazir P.; Zukotynski, Stefan
- Hydrogenated amorphous silicon (a-Si H) films deposited on crystalline silicon substrates using the DC saddle field (DCSF) plasma enhanced chemical vapor deposition (PECVD) system have been investigated. We have determined the complex dielectric function, ε(E) = ε1(E) + iε2(E) for hydrogenated amorphous silicon (a-Si:H) thin films by spectroscopic ellipsometry (SE) in the 1.5–4.5 eV energy range at room temperature. The results indicate that there is a change in the structure of the a-Si:H films as the thickness is increased above 4 nm. This is attributed to either an increase in the bonded hydrogen content and, or a decrease of voids during the growth of a-Si:H films. The film thickness and deposition temperature are two important parameters that lead to both hydrogen content variation and silicon bonding change as well as significant variations in the optical band gap. The influence of substrate temperature during deposition on film and interface properties is also included.
- Publication type
- Journal article
- Thin Solid Films, Vol. 519, no. 9 (Feb 2011), pp. 2863-2866
- Publication year
- FOR Code(s)
- 0204 Condensed Matter Physics; 0910 Manufacturing Engineering; 0912 Materials Engineering
- Amorphous silicon; Chemical vapor deposition; Ellipsometry; Thin films
- Publisher URL
- Copyright © 2010 Elsevier B.V. All rights reserved.
- Peer reviewed