Home List of Titles Structural characterization of femtosecond laser modified regions inside sapphire
Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.3/189566
- Structural characterization of femtosecond laser modified regions inside sapphire
- Juodkazis, Saulius; Kohara, Shinji; Ohishi, Yasuo; Hirao, Norihisa; Vailionis, Arturas; Mizeikis, Vygantas; Saito, Akira; Rode, Andrei
- We report on structural characterization of sapphire photomodified by voids of sub-wavelength diameter surrounded by amorphised regions formed after exposure by tightly-focused femtosecond laser pulses of 800 nm wavelength and 150 fs duration at the single and double-pulse irradiation inside crystalline sapphire. Regrowth of a crystalline phase near the edge between the amorphous and crystalline phases was observed by transmission electron microscopy (TEM) in the case of double-pulse-irradiated locations. Regions patterned by single-pulse-induced voids inside sapphire were characterized by synchrotron X-ray diffraction (XRD) technique. The XRD patterns indicate presence of an expanded phase of the host crystal. The origin of structural changes observed in TEM and XRD is discussed and is consistent with fast thermal quenching.
- Publication type
- Journal article
- Journal of Nanoscience and Nanotechnology, Vol. 11, no. 4 (Apr 2011), pp. 2931-2936
- Publication year
- FOR Code(s)
- 0912 Materials Engineering; 1007 Nanotechnology
- Femtosecond laser nano-/micro-fabrication; Nano-structured materials; Phase transitions; Sapphire
- American Scientific Publishers
- Publisher URL
- Copyright © 2011 American Scientific Publishers. The publisher does not allow institutions to archive either the published version or the accepted manuscript of the paper.
- Peer reviewed