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Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.3/190958
- Single wall carbon nanotube field effect transistor model
- Ahmadi, Mohammad Taghi; Ismail, Razali; Johari, Zaharah; Webb, Jeffrey Frank
- The low-energy-limit band structure of carbon nanotubes (CNTs) indicates parabolic behavior. However it is not parabolic in other parts of the band energy. Based on the confinement effect we present an analytical model that captures the essence of the physical processes in a carbon nanotube field effect transistor (CNTFET). The model covers seamlessly the whole range of transport from drift-diffusion to ballistic. It has been clarified that the intrinsic speed of CNTs is governed by the transit time of electrons. Although the transit time is more dependent on the saturation velocity than on the weak-field mobility, the feature of high-electron mobility is beneficial in the sense that the drift velocity is always maintained closer to the saturation velocity, at least at the drain end of the transistor where electric field is necessarily high and controls the saturation current. The results obtained are applied to the modeling of the current-voltage characteristics of a CNTFET. The channel-length modulation is shown to arise from the drain velocity becoming closer to the ultimate saturation velocity as the drain voltage is increased.
- Publication type
- Journal article
- Journal of Computational and Theoretical Nanoscience, Vol. 8, no. 2 (Feb 2011), pp. 261-267
- Publication year
- FOR Code(s)
- 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics; 0913 Mechanical Engineering; 1007 Nanotechnology
- Band structure; Carbon nanotube field effect transistor; Carbon nanotubes; CNT; CNTFET
- American Scientific Publishers
- Publisher URL
- Copyright © 2011 American Scientific Publishers. The publisher does not allow Swinburne Research Bank to reproduce either the accepted manuscript or the published version of the work without payment of a fee.
- Peer reviewed