Search Swinburne Research Bank
This object has not yet been indexed by the background indexing service.
Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.3/193099
|Download PDF (Published version) (Adobe Acrobat PDF, -1 bytes)|
- 3D write-read-erase memory bits recording by fs-pulses in LiNbO3
- Juodkazis, S.; Gamaly, E. G.; Mizeikis, V.; Misawa, H.; Rode, A. V.; Krolikowski, W. Z.
- In this paper, we present results of experimental and theoretical studies of the formation of refractive index voxels in photorefractive crystals with high power femtosecond laser pulses. We used 150 fs pulses at 800 nm wavelength tightly focused inside the iron-doped lithium niobate crystal in a single shot regime. We discuss various aspects of the recording/erasing process including mechanisms of laser absorption, electron excitation and recombination, formation of charge separation field, as well as methods for control of the size and longevity of the refractive index changes. The analysis shows that the photovoltaic effect is mainly responsible for these changes. The presented results suggest the possibility of suitability of properly chosen femtosecond pulses for fast 3D write-read-erase optical memory application.
- Publication type
- Conference paper
- Proceedings of the European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference (CLEO/Europe-IQEC), Munich, Germany, 17-22 June 2007
- Publication year
- Publisher URL
- Copyright © 2007 IEEE. Published version of this paper reproduced here in accordance with the copyright policy of the publisher. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.