Home List of Titles High-density microwave plasma of SiH4/H2 for high rate growth of highly crystallized microcrystalline silicon films
Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.3/197818
- High-density microwave plasma of SiH4/H2 for high rate growth of highly crystallized microcrystalline silicon films
- Jia, H.; Saha, J. K.; Ohse, N.; Shirai, H.
- The plasma parameters for the fast deposition of highly crystallized microcrystalline silicon (µc-Si) films with low defect density are presented using a high-density and low temperature SiH4-H2 mixture microwave plasma. A very high deposition rate of 65 Å/s was achieved for a SiH4 concentration of 67% diluted in H2 with a high Raman crystallinity I c/I a > 2.5 and a low defect density of 1−2 × 1016 cm−3 by adjusting the plasma conditions. Contrary to the case of a conventional rf plasma, the defect density of the µc-Si films strongly depends on substrate temperature, T s, and increases with increasing T s even if T s is below 300 °C. This indicates that the real temperature at the growing surface is higher than the monitored value. A sufficient supply of deposition precursors such as SiH3 at the growing surface under an appropriate ion bombardment is effective for the fast deposition of highly crystallized µc-Si films as well as for the suppression of the amorphous incubation and transition interface layers at the initial growth stage.
- Publication type
- Journal article
- European Physics Journal: Applied Physics, Vol. 33, no. 3 (Mar 2006), pp. 153-159
- Publication year
- FOR Code(s)
- 01 Mathematical Sciences; 02 Physical Sciences
- Crystallinity; Film growth; Growth surface; Microcrystalline silicon films; Microwave plasma
- EDP Sciences
- Publisher URL
- Copyright © EDP Sciences.
- Peer reviewed