In this paper, we demonstrate the effect of dc substrate bias on high-rate deposition of microcrystalline silicon (μc-Si) films by using a high-density microwave plasma source. Film depositions are performed at a high silane concentration of 67% (deposition rate of ~ 60 Å s−1) with a low substrate temperature of 250 °C. The & 0956;c-Si films deposited under appropriate negative dc substrate bias exhibit improved film crystallinity, mass density and reduced defect density along with thinner amorphous silicon incubation layer at the initial growth stage. These can be attributed to the beneficial effect of moderate ion bombardment as well as the less contribution of harmful short-lifetime radicals to film growth.
Journal of Physics D: Applied Physics,
Vol. 39, no. 17 (Sep 2006), pp. 3844-3848