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Home List of Titles High-rate synthesis of microcrystalline silicon films using high-density SiH4/H2 microwave plasma
Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.3/197799
- High-rate synthesis of microcrystalline silicon films using high-density SiH4/H2 microwave plasma
- Jia, Haijun; Saha, Jhantu K.; Ohse, Naoyuki; Shirai, Hajime
- A high electron density (> 1011 cm− 3) and low electron temperature (1–2 eV) plasma is produced by using a microwave plasma source utilizing a spoke antenna, and is applied for the high-rate synthesis of high quality microcrystalline silicon (μc-Si) films. A very fast deposition rate of 65 Å/s is achieved at a substrate temperature of 150 °C with a high Raman crystallinity and a low defect density of (1–2) × 1016 cm− 3. Optical emission spectroscopy measurements reveal that emission intensity of SiH and intensity ratio of Hα/SiH are good monitors for film deposition rate and film crystallinity, respectively. A high flux of film deposition precursor and atomic hydrogen under a moderate substrate temperature condition is effective for the fast deposition of highly crystallized μc-Si films without creating additional defects as well as for the improvement of film homogeneity.
- Publication type
- Journal article
- Thin Solid Films, Vol. 515, no. 17 (Jun 2007), pp. 6713-6720
- Publication year
- FOR Code(s)
- 0204 Condensed Matter Physics; 0910 Manufacturing Engineering; 0912 Materials Engineering
- High-rate synthesis; Low defect density; Microcrystalline silicon; Microwave plasma
- Publisher URL
- Copyright © 2007 Elsevier B.V. All rights reserved.
- Peer reviewed