High-rate synthesis of microcrystalline silicon films using high-density SiH4/H2 microwave plasma

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High-rate synthesis of microcrystalline silicon films using high-density SiH4/H2 microwave plasma

Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.3/197799

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Title: High-rate synthesis of microcrystalline silicon films using high-density SiH4/H2 microwave plasma
Author(s): Jia, Haijun; Saha, Jhantu K.; Ohse, Naoyuki; Shirai, Hajime
Abstract: A high electron density (> 1011 cm− 3) and low electron temperature (1–2 eV) plasma is produced by using a microwave plasma source utilizing a spoke antenna, and is applied for the high-rate synthesis of high quality microcrystalline silicon (μc-Si) films. A very fast deposition rate of 65 Å/s is achieved at a substrate temperature of 150 °C with a high Raman crystallinity and a low defect density of (1–2) × 1016 cm− 3. Optical emission spectroscopy measurements reveal that emission intensity of SiH and intensity ratio of Hα/SiH are good monitors for film deposition rate and film crystallinity, respectively. A high flux of film deposition precursor and atomic hydrogen under a moderate substrate temperature condition is effective for the fast deposition of highly crystallized μc-Si films without creating additional defects as well as for the improvement of film homogeneity.
Publication type: Journal article
Source: Thin Solid Films, Vol. 515, no. 17 (Jun 2007), pp. 6713-6720
Publication year: 2007
FOR Code(s): 0204 Condensed Matter Physics; 0910 Manufacturing Engineering; 0912 Materials Engineering
Keyword(s): High-rate synthesis; Low defect density; Microcrystalline silicon; Microwave plasma
Publisher: Elsevier
ISSN: 0040-6090
Publisher URL: http://dx.doi.org/10.1016/j.tsf.2007.01.055
Peer reviewed