Home List of Titles High-density microwave plasma-enhanced chemical vapor deposition of microcrystalline silicon from dichlorosilane
Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.3/197806
- High-density microwave plasma-enhanced chemical vapor deposition of microcrystalline silicon from dichlorosilane
- Ohse, Naoyuki; Hamada, Kazu; Saha, Jhantu Kumar; Kobayashi, Tomohiro; Takemura, Yu-ichiro; Shirai, Hajime
- Fast deposition of hydrogenated chlorinated microcrystalline (μc–) Si:H:Cl films was investigated using the high-density and low-temperature microwave plasma source utilizing a spoke antenna of a SiH2Cl2–H2 mixture. The optical emission spectroscopy study revealed that the SiCl intensity and the Ha/SiCl intensity ratio are the possible monitors for the film deposition rate and the degree of the film crystallinity, respectively. The μc–Si:H:Cl films fabricated from SiH2Cl2 possessed less volume fraction of void and defect density rather than μc–Si:H from SiH4 while maintaining a high deposition rate of 40 Å/s. These originate from the chemical reactivity of H and Cl terminated growing surface. The fine structure of μc–Si:H:Cl film is discussed and compared with that of μc–Si:H film from SiH4.
- Publication type
- Journal article
- Thin Solid Films: proceedings of the 20th Symposium on Plasma Science for Materials (SPSM-20), Nagoya, Japan, 21-22 June 2007, Vol. 516, no. 19 (Aug 2008), pp. 6585-6591
- Publication year
- FOR Code(s)
- 0204 Condensed Matter Physics; 0910 Manufacturing Engineering; 0912 Materials Engineering
- Chemical reactivity; c-Si:H:Cl; Deposition; High-density plasma; Microcrystalline silicon films; Microwave plasma; SiH2Cl2
- Publisher URL
- Copyright © 2007 Elsevier B.V. All rights reserved.
- Peer reviewed