Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.3/197806

Title

High-density microwave plasma-enhanced chemical vapor deposition of microcrystalline silicon from dichlorosilane

Author(s)

Ohse, Naoyuki;  Hamada, Kazu;  Saha, Jhantu Kumar;  Kobayashi, Tomohiro;  Takemura, Yu-ichiro;  Shirai, Hajime

Abstract

Fast deposition of hydrogenated chlorinated microcrystalline (μc–) Si:H:Cl films was investigated using the high-density and low-temperature microwave plasma source utilizing a spoke antenna of a SiH2Cl2–H2 mixture. The optical emission spectroscopy study revealed that the SiCl intensity and the Ha/SiCl intensity ratio are the possible monitors for the film deposition rate and the degree of the film crystallinity, respectively. The μc–Si:H:Cl films fabricated from SiH2Cl2 possessed less volume fraction of void and defect density rather than μc–Si:H from SiH4 while maintaining a high deposition rate of 40 Å/s. These originate from the chemical reactivity of H and Cl terminated growing surface. The fine structure of μc–Si:H:Cl film is discussed and compared with that of μc–Si:H film from SiH4.

Publication type

Journal article

Source

Thin Solid Films: proceedings of the 20th Symposium on Plasma Science for Materials (SPSM-20), Nagoya, Japan, 21-22 June 2007, Vol. 516, no. 19 (Aug 2008), pp. 6585-6591

Publication year

2008

FOR Code(s)

0204 Condensed Matter Physics;  0910 Manufacturing Engineering;  0912 Materials Engineering

Keyword(s)

Chemical reactivity;  c-Si:H:Cl;  Deposition;  High-density plasma;  Microcrystalline silicon films;  Microwave plasma;  SiH2Cl2

Publisher

Elsevier

ISSN

0040-6090

Publisher URL

http://dx.doi.org/10.1016/j.tsf.2007.11.032

Copyright

Copyright © 2007 Elsevier B.V. All rights reserved.

Peer reviewed