Search Swinburne Research Bank
Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.3/197882
- Residual stresses in silicon-on-sapphire thin film systems
- Pramanik, A.; Zhang, L. C.
- This paper uses the finite element method to analyse the generation and evolution of residual stress in silicon-on-sapphire thin film systems during cooling. The effects of material properties, thin film structures and processing conditions, on the stress distribution were explored in detail. It was found that under certain conditions, significant stress concentration and discontinuity can take place to initiate crack and/or delamination in the systems. However, these can be minimised by controlling the buffer layer thickness.
- Publication type
- Journal article
- International Journal of Solids and Structures, Vol. 48, no. 9 (May 2011), pp. 1290-1300
- Publication year
- FOR Code(s)
- 0913 Mechanical Engineering; 0912 Materials Engineering
- Buffer layer thickness; Buffer layers; Cooling; Cooling systems; Effects of materials; Film preparation; Finite element method; Multilayers; Processing condition; Residual stresses; Sapphire; Semiconducting silicon compounds; Silicon-on-sapphire; Stress concentration; Stress distribution; Thin film; Thin film systems; Thin-film structure
- Publisher URL
- Copyright © 2011 Elsevier Ltd. All rights reserved.
- Peer reviewed