Molecular mechanisms of aluminum oxide thin film growth on polystyrene during atomic layer deposition

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Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.3/198513

Title: Molecular mechanisms of aluminum oxide thin film growth on polystyrene during atomic layer deposition
Author(s): Puttaswamy, Manjunath; Haugshøj, Kenneth Brian; Højslet Christensen, Leif; Kingshott, Peter
Abstract: One layer at a time: A proposed growth mechanism of Al2O 3 atomic layer deposition on a polystyrene surface is presented. The infiltration of trimethylaluminum and H2O precursors may result in Al2O3 growth in the polystyrene matrix (subsurface), thus forming a hybrid interface (shown in the green box) of C8H 7O- and C6H4O2Al - ions.
Publication type: Journal article
Source: Chemistry - A European Journal, Vol. 16, no. 47 (Dec 2010), pp. 13925-13929
Publication year: 2010
FOR Code(s): 03 Chemical Sciences
Keyword(s): Aluminum; Aluminum coatings; Aluminum oxide thin films; Aluminum oxides; Atomic layer; Atomic layer deposition; Atoms; Deposition; Film growth; Growth mechanisms; Hybrid interface; Hybrid materials; Mass spectrometry; Molecular mechanism; Oxides; Polymer blends; Polystyrene matrix; Polystyrenes; Trimethylaluminum
Publisher: Wiley
ISSN: 0947-6539
Publisher URL: http://dx.doi.org/10.1002/chem.201001888
Peer reviewed