Time-resolved and time-integrated photoluminescence analysis of state filling and quantum confinement of silicon quantum dots

Search Swinburne Research Bank

Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.3/2357

Download PDF (Published version) (Adobe Acrobat PDF, -1 bytes)

Title: Time-resolved and time-integrated photoluminescence analysis of state filling and quantum confinement of silicon quantum dots
Author(s): Dao, Lap Van; Wen, Xiaoming; Do, My T. T.; Hannaford, Peter; Cho, Eun-Chel; Cho, Young H.; Huang, Yidan
Abstract: In this paper we report studies of the optical properties of silicon quantum dot structures. From time-resolved and time-integrated photoluminescence measurements we investigate the state-filling effect and carrier lifetime, and discuss the parabolic confinement of quantum dot structures and the large energy splitting between quantum dot levels. The photoluminescence intensities for different quantum dot levels decay with a stretched exponential function and the decay times are in the range 2–100 µs depending on the observation wavelength and the dot size.
Publication type: Journal article
Research centre: Swinburne University of Technology. Faculty of Engineering and Industrial Sciences. Centre for Atom Optics and Ultrafast Spectroscopy
Source: Journal of applied physics, Vol. 97, no. 1 (2005)
Publication year: 2005
Publisher: American Institute of Physics
ISSN: 0021-8979
Publisher URL: http://dx.doi.org/10.1063/1.1823027
Full text
Peer reviewed