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- Laser-induced damage threshold and laser processing of GaN
- Sun, Hong-Bo; Juodkazis, Saulius; Eliseev, D G.; Sugahara, T.; Wang, Tao; Matsuo, Shigeki; Sakai, Shiro; Misawa, Hiroaki
- The single-shot pulse laser-induced damaging thresholds (LIDTs), an important laser-optical constant of GaN material, were determined to approximately 34 and 65 nJ upon the irradiation of 400 and 800 nm wavelengths, 150 fs duration laser pulse focused by 40x magnification of dry objective lens (a lateral size of focal spot roughly at 1.22 lambda/NA, where NA=0.65). The critical energy of sub-threshold pulses was determined for multi-shot optical damaging. The factors that influenced the LIDTs, optical properties of damaged GaN material and the possibility of laser processing of nitride devices were also discussed.
- Publication type
- Conference paper
- Proceedings of SPIE: High-Power Laser Ablation II, Osaka, Japan, 01-05 November 1999 / Claude R. Phipps and Masayuki Niino (eds.), Vol. 3885, pp. 311-322
- Publication year
- Femtosecond laser ablation; Femtosecond laser pulses; Gallium Nitride; GaN; Laser-induced damage threshold; Laser microfabrication; Laser processing; Photonic crystals
- Publisher URL
- Copyright © 2000 Society of Photo-Optical Instrumentation Engineers. This paper was originally published in Proceedings of SPIE (Vol. 3885), and is available from: http://dx.doi.org/10.1117/12.376976. The published version of the paper is reproduced here in accordance with the copyright policy of the publisher. One print or electronic copy may be made for personal use only. Systematic electronic or print reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
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