Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.3/231775

Title

Surface/interface analysis of a nitrogen implanted austenitic stainless steel

Author(s)

Shedden, B. A.;  Samandi, M.;  Collins, G. A.

Abstract

Plasma Immersion Ion Implantation (PI3) is a recently developed Australian process that was originally perceived as an alternative non-line-of-sight ion implantation technique. In this work, several surface analytical systems were utilised to investigate the resultant microstructure of AISI 316 austenitic stainless steel treated by PI3 at a range of temperatures, and from this to gain insight into the underlying surface modification mechanism of PI3. Glancing angle X-ray diffraction (GAXD) provided surface sensitive microstructural information, while glow discharge optical emission spectrometry (GDOES) was used to determine elemental depth distributions. It has been established that PI3 is capable of producing surface structures unattainable in any other nitriding system, be it plasma nitriding or conventional nitrogen implantation.

Publication type

Conference paper

Source

Materials Science Forum: incorporating the proceedings of 'Interfaces II', the 2nd International Conference on the Role of Interfaces in Advanced Materials Design, Processing and Performance, Ballarat, Victoria, Australia, 01-05 November 1993 / B. C. Muddle (ed.), Vol. 189-190, pp. 435-440

Publication year

1995

Keyword(s)

Elemental depth distribution;  Emission spectroscopy;  Glancing angle x ray diffraction;  Glow discharge optical emission spectrometry;  Ion implantation;  Materials interfaces;  Microstructure;  Nitriding;  Nitrogen implanted austenitic stainless steel;  Plasma applications;  Plasma immersion ion implantation;  Stainless steel;  Surface structure;  Surface treatment;  Surface interface analysis;  Surfaces;  X-ray diffraction

Publisher

Trans Tech Publications

ISSN

0255-5476 (series ISSN)

Publisher URL

http://dx.doi.org/10.4028/www.scientific.net/MSF.189-190.435

Copyright

Copyright © 1995 Trans Tech Publications, Switzerland.

Peer reviewed