Optical properties of semiconductor quantum structures CdTe/ZnSe: contribution of CdTe quantum dots

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Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.3/43

Title: Optical properties of semiconductor quantum structures CdTe/ZnSe: contribution of CdTe quantum dots
Author(s): Dao, Lap Van; Hannaford, Peter; Lowe, Martin; Makino, Hisao; Takai, Toshiaki; Yao, Takafumi
Abstract: The optical properties of the semiconductor quantum structure CdTe/ZnSe are investigated using temperature-dependent photoluminescence and spectrally-resolved three-pulse two-color femtosecond photon echo measurements. The origin of the observed photoluminescence as luminescence from self-assembled quantum dots and the coexistence of two-dimensional and zero-dimensional structures are discussed in terms of the temperature-dependence of the photoluminescence, the wavelength dependence of the dephasing of excited carriers, and the homogeneous broadening of the energy levels.
Publication type: Journal article
Research centre: Swinburne University of Technology. Faculty of Engineering and Industrial Sciences
Source: International Journal of Nanoscience, Vol. 3, no. 3 (2004), pp. 265-272
Publication year: 2004
Keyword(s): Photon echo (42.50.Md); Photoluminescence (78.55.-m); Optical properties of low-dimensional structures (78.66.-w)
Publisher: World Scientific
ISSN: 0219-581X
Publisher URL: http://dx.doi.org/10.1142/S0219581X04002061
Peer reviewed