Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.3/4501
- Title
- The optical properties of very thin-layer CDTE/ZNSE
- Author(s)
-
Dao, Lap Van;
Makino, Hisao;
Takai, Toshiaki;
Lowe, Martin;
Hannaford, Peter;
Yao, Takafumi
- Abstract
- The optical properties of the very thin layer semiconductor structure CdTe/ZnSe are investigated using temperature dependent photoluminescence and spectrally resolved three-pulse two-colour femtosecond photon echo measurements. The temperature dependence of the photoluminescence, the wavelength dependence of the dephasing of excited carriers, and the homogeneous broadening of the energy levels shown the luminescence of quantum dots in this samples.
- Publication type
- Conference paper
- Research centre
- Swinburne University of Technology. School of Biophysical Science and Electrical Engineering
- Source
-
Proceedings Conference on Optoelectronic and Microelectronic Materials and Devices/COMMAD 2002, Sydney, N.S.W., Australia, 11-13 December 2002,
pp. 145-148
- Publication year
- 2002
- Publisher
- Institute of Electrical and Electronics Engineers
- ISSN
- 1097-2137
- Publisher URL
- http://dx.doi.org/10.1109/COMMAD.2002.1237213
- Copyright
- Copyright © 2002 IEEE. Published version of the paper reproduced here in accordance with the copyright policy of the publisher. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
- Full text

- Peer reviewed
