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- Title
- Ultrafast carrier dynamics of Si quantum dots embedded in SiN matrix
- Author(s)
- Dao, Lap Van; Davis, Jeff; Hannaford, Peter; Cho, Young-Hyun; Green, Martin A.; Cho, Eun-Chel
- Abstract
- Femtosecond spectrally resolved two-color three-pulse nonlinear spectroscopy is used to study the dynamics and coherence properties of excited carriers in Si quantum dot structures embedded in silicon nitride. A very short dephasing time of <180 fs at room temperature is observed. Ultrashort population relaxation times of ~400 fs and 6–10 ps are measured and discussed in the context of the different contributions from transverse optical and transverse acoustic phonon-assisted transitions.
- Publication type
- Journal article
- Research centre
- Swinburne University of Technology. Faculty of Engineering and Industrial Sciences. Centre for Atom Optics and Ultrafast Spectroscopy
- Source
- Applied Physics Letters, Vol. 90, no. 8 (2007)
- Publication year
- 2007
- Keyword(s)
- Silicon; Silicon compounds; Elemental semiconductors; Wide band gap semiconductors; Semiconductor quantum dots; Carrier relaxation time; High-speed optical techniques; Phonons
- Publisher
- American Institute of Physics
- ISSN
- 0003-6951
- Publisher URL
- http://dx.doi.org/10.1063/1.2695977
- Copyright
- Copyright © 2007 American Institute of Physics. Reproduced in accordance with the copyright policy of the publisher.
- Full text
- Peer reviewed
