Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.3/603
- Title
- Femtosecond nonlinear coherence spectroscopy of carrier dynamics in porous silicon
- Author(s)
-
Dao, Lap Van;
Hannaford, Peter
- Abstract
- Multidimensional nonlinear coherence spectroscopy based on spectrally resolved femtosecond two-color three-pulse photon echo measurements are used to investigate carrier dynamics and energy structures in porous silicon samples, an indirect band-gap material. Short time scales for electron localization (~500 fs) and electron hopping (~3 ps) are observed which are dependent on the porosity of the samples. A spin-orbit splitting for the conduction band of 4–5 meV is deduced. The observed energy splittings of 18 and 22 meV for the 48% porosity sample and 21 and 28 meV for the 70% porosity sample are assigned to spin-orbit splitting for the valence band.
- Publication type
- Journal article
- Research centre
- Swinburne University of Technology. Faculty of Engineering and Industrial Sciences. Centre for Atom Optics and Ultrafast Spectroscopy
- Source
-
Journal of Applied Physics,
Vol. 98, no. 8 (Oct 2005)
- Publication year
- 2005
- Publisher
- American Institute of Physics
- ISSN
- 0021-8979
- Publisher URL
- http://dx.doi.org/10.1063/1.2102070
- Copyright
- Copyright © 2005 American Institute of Physics. Reproduced in accordance with the copyright policy of the publisher.
- Full text

- Peer reviewed
