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Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.3/25282
- Investigating the performance of RF MEMS switches
- Su, Hieng Tiong; Llamas-Garro, Ignacio; Lancaster, Michael J.; Prest, Martin; Park, Jae-Hyoung; Kim, Jung-Mu; Baek, Chang-Wook; Kim, Yong-Kweon
- The performance of Micro-Electro-Mechanical System (MEMS) metal switches were investigated at wide temperature range. Measurements were carried out using cryogenic probe station and S-parameters were taken using a network analyser for frequencies up to 20 GHz. A total of 28 switches were evaluated. The investigation shows a 50% increase in the actuation voltage and a decrease in the percentage of operational switches as the temperature was reduced to 10 K. At room temperature the best isolation (when open) was 30 dB at 10 GHz with an insertion loss of 0.14 dB (when closed). Measurement accuracy was reduced at low temperature, however, isolations and insertion losses were similar to room temperature values.
- Publication type
- Conference paper
- Research centre
- Swinburne University of Technology. Sarawak Campus
- Proceedings IEEE International Conference on Semiconductor Electronics 2006 : ICSE '06, Kuala Lumpur, Malaysia, 29 November-01 December 2006, p. 263-266
- Publication year
- RF; MEMS; Actuation voltage; Low temperatures; Metal switch; Reliability
- Publisher URL
- Copyright © 2006 IEEE.