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- Title
- Proton irradiation induced intermixing in InxGa 1-xAs/InP quantum wells
- Author(s)
- Gareso, Paulus L.; Tan, Hark Hoe; Wong-Leung, Jenny; Jagadish, Chennupati; Dao, Lap Van
- Abstract
- We have investigated the quantum well interdiffusion of InxGa1−xAs/InP QWs with different In composition using proton irradiation. 50 KeV proton implantation with various doses from 5x1014 H/cm2 to 1x1016 H/cm2 with subsequent annealing at 750◦ for 60 sec were used to induce the atomic intermixing process. Photoluminescence was performed to measure the bandgap energy shift between the unimplanted and implanted region of the structures. Initially, the energy shift increased with increasing dose, but then saturated at the highest doses. The energy shift was also found to decrease with increased implantation temperature. Time resolved photoluminescence was performed to investigate the carrier dynamic of the quantum wells after intermixing.
- Publication type
- Conference paper
- Research centre
- Swinburne University of Technology. Centre for Atom Optics and Ultrafast Spectroscopy
- Source
- Proceedings of the 2004 IEEE Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD04), Brisbane, Queensland, Australia, 08-10 December 2004, pp. 93-96
- Publication year
- 2005
- Keyword(s)
- InGaAs quantum wells; Interdiffusion; Intermixing; Proton irradiation
- Publisher
- IEEE
- ISBN
- 9780780388208, 0780388208
- Publisher URL
- http://dx.doi.org/10.1109/COMMAD.2004.1577500
- Copyright
- Copyright © 2005 IEEE. Published version of the paper reproduced here in accordance with the copyright policy of the publisher. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
- Full text
- Peer reviewed
