A 1.8 GHz to 2.1 GHz 0.25 μm CMOS wideband LNA for a multi-standard mobile receiver

Author(s)

Mustaffa, M. T.; Zayegh, A.; Veljanovski, R.; Stojcevski, A.

Available versions

Abstract

A single-ended wideband low noise amplifier for a multi-standard (1.8 GHz to 2.1 GHz) mobile receiver has been designed and simulated in a 0.25 μm CMOS technology process. The circuit topology is based on inductively degenerated common source (IDCS). The enhancement for bandwidth was performed using inductive shunt-peaking that added more freedom to the circuit. Circuit simulation results shows a power gain of 23 dB, a noise figure of 0.6 dB with IIP3 and 1-dB compression point of - 5.1 dBm and -17.3 dBm respectively. The current consumption for this circuit is 9.5 mA with voltage supply of 2.5V.

Publication year

2007

Publication type

Conference paper

Source

International Symposium on Integrated Circuits (ISIC 07), Singapore, 26-28 September 2007, pp. 422-425

Publisher

IEEE

ISBN

9781424407972

Copyright

Copyright © 2007 IEEE. The published version is reproduced in accordance with the copyright policy of the publisher. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

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