Anomalous temperature dependence of diode saturation currents in polycrystalline silicon thin-film solar cells on glass


Wong, J.; Huang, J. L.; Kunz, O.; Ouyang, Z.; He, S.; Widenborg, P. I.; Aberle, A. G.; Keevers, M.; Green, M. A.

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Temperature dependent Suns-Voc measurements are performed on four types of polycrystalline silicon thin-film solar cells on glass substrates, all of which are made by solid phase crystallization∕epitaxy of amorphous silicon from plasma enhanced chemical vapor deposition or e-beam evaporation. Under the two-diode model, the diode saturation currents corresponding to n = 1 recombination processes for these polycrystalline silicon p‐n junction cells follow an Arrhenius law with activation energies about 0.15-0.18 eV lower than that of single-crystal silicon p‐n diodes of 1.206 eV, regardless of whether the cells have an n- or p-type base. This discrepancy manifests itself unambiguously in a reduced temperature sensitivity of the open-circuit voltage in thin-film polycrystalline silicon solar cells compared to single-crystal silicon cells with similar voltages. The physical origin of the lowered activation energy is attributed to subgap levels acting either as minority carrier traps or shallow recombination centers.

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Journal article


Journal of Applied Physics, Vol. 105, no. 10 (May 2009), article no. 103705




American Institute of Physics


Copyright © 2009 American Institute of Physics. The published version is reproduced with the permission of the publisher.