Huang, J. L.;
Widenborg, P. I.;
Aberle, A. G.;
Green, M. A.
Temperature dependent Suns-Voc measurements are performed on four types of polycrystalline silicon thin-film solar cells on glass substrates, all of which are made by solid phase crystallization∕epitaxy of amorphous silicon from plasma enhanced chemical vapor deposition or e-beam evaporation. Under the two-diode model, the diode saturation currents corresponding to n = 1 recombination processes for these polycrystalline silicon p‐n junction cells follow an Arrhenius law with activation energies about 0.15-0.18 eV lower than that of single-crystal silicon p‐n diodes of 1.206 eV, regardless of whether the cells have an n- or p-type base. This discrepancy manifests itself unambiguously in a reduced temperature sensitivity of the open-circuit voltage in thin-film polycrystalline silicon solar cells compared to single-crystal silicon cells with similar voltages. The physical origin of the lowered activation energy is attributed to subgap levels acting either as minority carrier traps or shallow recombination centers.
Journal of Applied Physics, Vol. 105, no. 10 (May 2009), article no. 103705
American Institute of Physics
Copyright © 2009 American Institute of Physics. The published version is reproduced with the permission of the publisher.